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Patent Pending The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This terahertz electromagnetic wave conversion device has an HEMT structure having a substrate (201), an electron transit layer (202), an electron supply layer (203), a source (204) and a drain (205), and comprises a first group of gates (G1) and a second group of gates (G2).
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