Semiconductor device

Patent Pending A semiconductor device comprises a gate electrode that is provided on a substrate and contains Al or an Al alloy; a gate insulating film that is so formed as to cover at least the upper surface of the gate electrode and contains an anodic oxide film that is obtained by anodizing the Al or Al alloy of the gate electrode; and an insulator layer that is so formed on the substrate as to surround the gate electrode and has a thickness that is substantially equal to a total of the thickness of the gate electrode and the thickness of the gate insulating film formed on the upper surface of the gate electrode.