Semiconductor device

Patent Granted An object of this invention is to provide a method of manufacturing a TSV structure capable of preventing a substrate from being warped even if the substrate is reduced in thickness. A method of manufacturing a semiconductor device according to this invention includes integrating semiconductor elements on a surface of a semiconductor substrate to form at least a part of a circuit, forming a hole from the surface of the semiconductor substrate, forming an insulating film and a barrier film on an inner surface of the hole, forming a conductive metal on the surface of the barrier film to fill the hole, processing a rear surface of the semiconductor substrate to reduce the thickness to protrude the conductive metal, and forming a SiCN film on the rear surface of the semiconductor substrate.