Photoelectric transducer

Patent Pending It is an object of this invention to improve a conversion efficiency of a photoelectric transducer structure by reducing a contact resistance. In the photoelectric transducer structure of a pin structure according to this invention, either by selecting an upper limit energy level of a valence band of a p-type semiconductor layer and a work function of a metal layer contacted with the p-type semiconductor layer or by selecting an electron affinity of an n-type semiconductor layer and a work function of a metal layer contacted with the n-type semiconductor layer, a contact resistance is reduced as compared with the case where Al or Ag is used as an electrode.