Semiconductor device

Patent Granted A semiconductor device manufacturing method includes a step of forming a semiconductor element on a semiconductor substrate, and a step of forming a film on the semiconductor element by a CVD process. In the CVD process, microwaves are used as a plasma source, and microwave plasma, which has a plasma electron temperature of 1.5eV or below and a plasma electron density of 1OE011cm-3 or higher in the vicinity of the surface of the semiconductor substrate, is used.