Semiconductor device

Patent Granted As a gate insulating film disposed between a gate electrode and a semiconductor layer, a transparent insulator film A131 obtained from a coating agent is formed. The coating agent is one kind of mixed solution obtained in the following manner. A compound represented by RxMXm-x (in the formula, R represents a nonhydrolyzable substituent, M, an element selected from Si, Ti, Al, Zr, Zn, Sn and In, X, a hydrolyzable substituent, x, an integer between 0 and 3, m, a valence of M) is prepared and subjected to hydrolytic condensation to obtain a condensation product.