Electronics
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Japan, United states of America, Rest of World
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Wiring structure

Patent Granted A wiring structure of a semiconductor device or the like includes an interlayer insulating film and a conductor. The interlayer insulating film has a fluorocarbon film formed on an underlying layer. The conductor is buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and has a low dielectric constant. The fluorocarbon film can be formed with a good reproducibility and is stable.

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