Nitride semiconductor

Patent Pending The present invention relates to a method for manufacturing a nitride semiconductor, comprising the steps of controlling the temperature and pressure of an autoclave having a crystal seed having a hexagonal crystal structure, a solvent containing the nitrogen element, a raw material containing the metal elements of Group 13 of the periodic table, and a mineralizer introduced therein, so that the solvent is brought into the supercritical state and/or subcritical state to grow crystals of the nitride semiconductor on the surface of the crystal seed by the ammonothermal method, in which the crystal growth speed in the m-axis direction of the crystal seed is 1.5 times or above that in the c-axis direction of the crystal seed.