Semiconductor

Patent Pending In a semiconductor manufacturing method that manufactures a coplanar type thin film transistor, a microcrystalline film 10 that will become a channel region is formed on a glass substrate S, a sacrificial silicon oxide 20 film is formed on the microcrystalline film 10, and, in a state in which a surface boundary of the microcrystalline film 10 is protected by the sacrificial silicon oxide film 20, a doped silicon film 30 is built up that will become a source region and a drain region.