GaN material

Patent Granted Disclosed is a method for producing a GaN material having a higher thermal conductivity. A gallium nitride material is grown by an HVPE (Hydride Vapor Phase Epitaxial Growth) method. This growth is performed by supplying a carrier gas (G1) containing an H2 gas, a GaCl gas (G2) and an NH3 gas (G3) into a reaction chamber (10), while setting the growth temperature at not less than 900 C but not more than 1200 C, the growth pressure at not less than 8.08 x 104 Pa but not more than 1.21 x 105 Pa, the partial pressure of the GaCl gas (G2) at not less than 1.0 x 102 Pa but not more than 1.0 x 104 Pa, and the partial pressure of the NH3 gas (G3) at not less than 9.1 x 102 Pa but not more than 2.0 x 104 Pa. TM KIPO & WIPO 2009