Nitride semiconductor

Patent Pending PROBLEM TO BE SOLVED: To provide a relatively low-temperature and simple treatment process capable of obtaining the clean surface of a nitride semiconductor comparable to a high temperature hydrogen plasma irradiation result. ; SOLUTION: A method of cleaning the surface of the nitride semiconductor includes: a step of removing a natural oxide film by irradiating atomic hydrogen to the surface of the nitride semiconductor (B<SB>z</SB>Al<SB>x</SB>Ga<SB>1-x-y-z</SB>In<SB>y</SB>N<SB>1-p-q</SB>P<SB>p</SB>As<SB>q</SB>, provided that 0<=x, y, z, p, q<1 and x+y+z<1, p+q<1).