Si bulk polycrystal ingot

Patent Pending [PROBLEMS] To provide a process for producing an Si bulk polycrystal ingot, which can produce, at a high yield, a high-quality and high-homogeneity Si bulk polycrystal ingot which has no significant crystal defects and is free from diffused impurities. [MEANS FOR SOLVING PROBLEMS] A dendrite crystal (3) is produced, within a crucible (1) containing an Si melt (2), near the surface of the Si melt (2) by bringing a coolant close to the surface of the Si melt (2) from above the crucible (1), or by inserting the coolant into the Si melt (2) to locally cool the upper surface of the Si melt (2).