ZnO thin film

Patent Pending PROBLEM TO BE SOLVED: To provide a p-type impurity doped ZnO thin film which can be applied to various devices. ; SOLUTION: The ZnO thin film is a Mg<SB>X</SB>Zn<SB>1-X</SB>O film (0<=X<0.5) which is formed on a substrate. The acceptor concentration of a p-type dopant is set at 5*10<SP>20</SP>cm<SP>-3</SP>or less. When the acceptor concentration is over 5*10<SP>20</SP>cm<SP>-3</SP>, mixed crystal of a p-type impurity and a basic ZnO crystal is generated, and a high-quality ZnO thin film doped to be p-type is not obtained, which fact can be recognized through a change in ZnO secondary ion intensity.