Transistor

Patent Pending PROBLEM TO BE SOLVED: To provide a Schottky gate type field effect transistor having a channel layer of an organic semiconductor, in which mobility of the transistor is increased and selection of electrode material of the transistor is facilitated. ; SOLUTION: At least one organic single crystal semiconductor 6 selected from a group of organic low molecules, organic molecules, metal complex, fullerenes and carbon nanotubes serve as a channel layer.