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Interlayer insulating film/Wiring

Patent Granted This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF 4 and is stable, and a wiring structure comprising the same. In an interlayer insulating film comprising an insulating film provided on a substrate layer, the interlayer insulating film has an effective permittivity of not more than 3.

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