Oxide thin film

Patent Pending PROBLEM TO BE SOLVED: To provide a method of forming an oxide thin film by which a gas element can be efficiently doped into an oxide thin film while keeping the crystallinity of the oxide thin film. ; SOLUTION: With an amount of oxygen supplied in an oxide thin film formation process with no doping (first oxide thin film formation process) as a reference, a smaller amount of oxygen is supplied in an oxide thin film formation process including doping of a gas element (second oxide thin film formation process) than the reference amount.