Nitride semiconductor

Patent Granted PROBLEM TO BE SOLVED: To provide a practical process for efficiently and easily producing a nitride semiconductor having a C-plane of a large diameter or a nitride semiconductor thick in an m-axis direction. ; SOLUTION: The process comprises a step of regulating the temperature and pressure within an autoclave 3 containing a seed 10 having a crystal structure of a hexagonal system, a nitrogen element-containing solvent, a starting material 9 comprising a metallic element belonging to group 13 of the periodic table, and a mineralizer so that the solvent is brought to a supercritical state and/or subcritical state to allow a nitride semiconductor crystal to grow ammonothermally on the surface of the seed 10.