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Patent Granted PROBLEM TO BE SOLVED: To provide a high speed ultra-low power consumption nonvolatile memory, having a high temperature stability in a zero magnetic field. ; SOLUTION: An insulating layer 304 and a non-magnetic conductive layer 305 are laminated to a ferromagnetic free layer 303 in a tunnel magnetoresistance effect film 1, comprising the non-volatile magnetic memory having a writing method by a spin transfer torque.
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