GaN single crystal

Patent Granted PROBLEM TO BE SOLVED: To provide a method which can rapidly manufacture gallium nitride single crystal by a simple operation. ; SOLUTION: In the method, the gallium nitride crystal is ammonothermally grown on the surface of a seed while controlling the temperature and the pressure in the interior of an autoclave, in which the seed, a nitrogen element-containing solvent and halogenated gallium pentaammoniate (wherein halogen is chlorine, bromine or iodine) are charged, so that the solvent is in a supercritical state and/or subcritical state. In the autoclave, a mineralizing agent is further charged.