Free-standing nitride substrate

Patent Pending PROBLEM TO BE SOLVED: To provide a method of manufacturing a free-standing nitride substrate having little warpage or residual strain. ; SOLUTION: A nitride buffer layer 130 comprising GaN etc. is grown on a ZnMgO buffer layer 120 (a). Through a HVPE method, a nitride layer 140 comprising GaN etc. is grown on the nitride buffer layer 130 at a low substrate temperature (700-900[deg.]C) (b).