Compound semiconductor element

Patent Granted PROBLEM TO BE SOLVED: To obtain a high-performance compound semiconductor element selectively grown on a substrate via a metal nitride layer, and to easily separate the element from the substrate and the metal nitride layer. ; SOLUTION: The metal nitride layer is formed on the single crystal substrate, a pattern having an arbitrary mode is formed thereon by various methods to selectively form a group III-V nitride semiconductor substrate or an LED structure on only the limited metal nitride layer, and a metal supporting layer by a metal electrode formation and electric plating is formed on the LED structure.