Semiconductor element

Patent Granted PROBLEM TO BE SOLVED: To easily separate a semiconductor element such as an LED selectively grown on a substrate via a semiconductor growth promoting layer from the substrate and the semiconductor growth promoting layer. SOLUTION: The manufacturing method of a semiconductor element is provided with a step of forming a base layer on the substrate; a step of configuring a section region selectively patterned so that the base layer becomes a plurality of independent element forming regions and a mask layer forming an injection port region as an injection port of an etching solution, on the base layer;