Spin transistor

Patent Granted PROBLEM TO BE SOLVED: To provide a spin transistor which can control currents well. ; SOLUTION: In the spin transistor, a double ferromagnetic tunnel junction is formed by a source layer 1 constituted by half metal, an insulating layer 2, a gate layer 3 constituted by half metal, an insulating layer 4 and a drain layer 5 constituted by half metal, and further, a source electrode 6, a gate electrode 7 and a drain electrode 8 are provided.