Nitride single crystal

Patent Pending PROBLEM TO BE SOLVED: To provide a method for growing a nitride single crystal having good crystallinity at a faster speed. ; SOLUTION: In the method, the nitride single crystal is grown on the surface of a seed by an ammonothermal method while controlling the pressure and temperature in an autoclave, in which the seed, a solvent containing nitrogen atom, a raw material containing a metal element of group 13 in the periodic table, and a mineralizing agent of an amount of 1.5-15 mol% of the solvent are charged, so that the solvent is in a supercritical state and/or subcritical state.