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Semiconductor material

Patent Pending PROBLEM TO BE SOLVED: To provide a method which enables simple and quick evaluation of the physical properties of semiconductor material consisting of metal oxide particles or metal sulfide particles, in particular, constitutional component consisting of amount of crystal defects, degree of crystallization and crystalline form type and/or amorphous type, using a nondestructive means and additionally, to provide a physical property evaluating device used for the implementation of these methods.

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