GaN crystal

Patent Granted PROBLEM TO BE SOLVED: To provide an apparatus for growing a gallium nitride crystal under a pressure lower than a standard pressure. ; SOLUTION: The apparatus 1000 for growing the gallium nitride crystal has a crystal growing device 100. The crystal growing device 100 comprises a crucible 10, a reactor 20, sealing members 30, 40, a heating unit 50, gas-supplying tubes 60, 80, a valve 70, a flowmeter 90, a gas cylinder 110, and an exhaust tube 160.