Optical transistor

Patent Granted A ferroelectric (FE) or ferroelectromagnetic (FEM) polarizer with a unique fashion switching or amplifying has been designed. Control of an electromagnetic (EM) flux or optical beam (OB) has been carried out by splitting them on two parts: a passed one through the processing body and reflected part by this body. The controlling quantities are the values of an electric field (EF) or magnetic field (MF) which are applied to the processing body. The reflected part is used for creating the logical (optical and magnetic) elements (LE). The advanced transistor/memristor consists of FE or FEM processing crystal, source of an EM energy, and the analysing element. An EF or MF is applied to the crystal which is rotating a polarization angle of EM flow or OB. This angle is rotated according to the linear part of a FE or FEM crystalТs characteristic. The amplified signal is analysed in the units of a polarization angle. A combination of the passed through and reflected by the crystal flows or beams are been used for creating LE. The product is switching or amplifying of EM flow and OB as by magnitude, as well as by an angel of polarization. At the early state the control EF or MF fields are absent. That is why low MF or OB are passing through the processing body according to the linear part of its characteristic curve.