ZnO-based thin film

特許 権利維持 PROBLEM TO BE SOLVED: To provide a ZnO-based thin film and a ZnO-based semiconductor element, which can reduce a burden on a production apparatus, can improve doping control properties and reproducibility, and can provide p-type conduction without entailing a change in crystal structure. ; SOLUTION: The ZnO-based thin film includes as a basic structure a superlattice structure of an MgZnO/ZnO superlattice layer 3 for the provision of p type.