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特許 権利維持 PROBLEM TO BE SOLVED: To provide a method for manufacturing a stress-free GaN-based nitride compound semiconductor at a low cost by a simple process. SOLUTION: A method for manufacturing a GaN-based nitride semiconductor self-supporting substrate includes: a step of preparing a substrate; a step of forming a GaN dot and an NH<SB>4</SB>Cl layer on the substrate.
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