公式タイトルと情報はIP Exchange PlusとPremiumのユーザーのみが利用可能です。
特許 権利維持 An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.
追加情報の詳細を見るにはIP Exchange PlusまたはIP Exchange Premiumアカウントにアップグレードする必要があります
