Photocatalyst semiconductor element

特許 係属中 PROBLEM TO BE SOLVED: To provide a photocatalyst semiconductor element consisting of group III to V element nitride semiconductor which can be formed on various substrates and which improves utilization efficiency of a carrier produced by light irradiation and to provide its production method, a photocatalyst oxidation-reduction reaction apparatus and a photoelectrochemical reaction executing method by which oxidation-reduction reaction can be produced by light irradiation.