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特許 係属中 PROBLEM TO BE SOLVED: To provide an oxide thin film and an oxide thin film device which can form a flat film, as well as, an n-type impurity is doped. ; SOLUTION: In an oxide thin film 2, as shown in Fig.1(b), a dope oxide layer 2a in which the n-type (electron conduction type) impurity is doped, and an undope oxide layer 2b in which the n-type impurity is not doped are laminated alternatively and repeatedly.
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