Tunnel field effect transistor

特許 権利維持 The tunnel field-effect transistor (TFET) is a new type of metal-oxide-semiconductor field-effect transistor (MOSFET) proposed for low energy electronics. TFETs switch by modulating quantum tunnelling through a barrier instead of modulating thermionic emission over a barrier as in traditional MOSFETs. Because of this, TFETs are not limited by the thermal Maxwell-Boltzmann tail of carriers, which limits the subthreshold swing of MOSFETs to 60 mV/dec at room temperature.