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特許 権利維持 Optical lithography, which has been the predominant patterning technique since the advent of the semiconductor age, is capable of producing sub-100-nm patterns with the use of very short wavelengths (currently 193 nm). Optical lithography will require the use of liquid immersion and a host of resolution enhancement technologies (phase-shift masks (PSM), optical proximity correction (OPC)) at the 32 nm node.