Resonant interband tunnel diodes

特許 権利維持 Resonant interband tunneling diodes (RITDs) combine the structures and behaviors of both intraband resonant tunneling diodes (RTDs) and conventional interband tunneling diodes, in which electronic transitions occur between the energy levels in the quantum wells in the conduction band and that in the valence band.[15][16] Like resonant tunneling diodes, resonant interband tunneling diodes can be realized in both the III-V and Si/SiGe materials systems.