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特許

68,025 件
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Hair characteristics measur...

A hair characteristics measuring device has a sensor device and movement means for moving the sensor device, wherein the sensor device is moved by the movement means to scan sample hair. The hair c...

係属中

Thin film sensor

[PROBLEMS] To provide a method for fabricating a thin film sensor in which variation of electric characteristics is suppressed among products by achieving strong orientation of crystal not through ...

権利維持

Porous member

This invention provides a porous member that, when used in a field requiring a high level of cleanness, can suppress energy loss in a microwave band and can evenly disperse gas. The porous member i...

権利維持

Salt core

Disclosed is a salt core (2) composed of potassium and sodium as cations and chlorine and carbonic acid as anions. In the salt core (2), the molar ratio of the potassium ions in the total cations, ...

権利維持

Magnetic recording medium

This invention provides a vertical magnetic recoding medium, which can realize recording and reproduction of high-density information by realizing both refinement of the particle diameter and verti...

権利維持

Salt core

When a salt core (2) is formed by die casting, a melt is obtained first by heating and melting a mixed salt containing at least a potassium salt and a sodium salt. Then, the temperature of the melt...

権利維持

Testosterone level increase

Disclosed is a substance which is a safe food ingredient that has been used in a food for many years and can increase the testosterone level. The substance comprises vitamin K as an active ingredie...

権利維持

Salt core

Disclosed is a salt core (2) which is formed into a shape of a water jacket (6) by die-casting or the like by using a salt of bromine and at least one of sodium and potassium and a salt of carbonic...

権利維持

Composite material

Disclosed is a novel highly functional composite material which is excellent in mechanical performance, electrical conductivity and electromagnetic wave absorption. Also disclosed is a method for p...

権利維持

Power IC device

Provided is a power IC device having a low ON resistance at a power MOS transistor section and a high processing speed at a front layer channel MOS transistor section. A method for manufacturing su...

権利維持

Porous particulates

Disclosed are particulates of calcium oxide and calcium hydroxide which are suitably used for filling a gas fixing unit (32) of a fixation device (3) for a halide gas. Particularly disclosed are th...

権利維持

Shower plate

Disclosed is a shower plate which does not require a cover plate. Specifically disclosed is a shower plate (105) which is arranged in a processing chamber (102) of a plasma processing apparatus for...

権利維持

Light-emitting device

Disclosed is an apparatus for manufacturing a light-emitting device which is characterized by comprising a plurality of processing chambers for performing a substrate processing for forming a light...

権利維持

Light-emitting device

Disclosed is an apparatus for manufacturing a light-emitting device, which comprises a plurality of processing chambers for forming a light-emitting device having a plurality of layers including an...

権利維持

X-ray CT

It is possible to eliminate a windmill-shaped artifact inevitably generated when performing a helical scan by an X-ray CT. For this, the X-ray CT device includes: an X-ray source (12); an X-ray det...

権利維持

Lactic acid bacterium

Disclosed is a lactic acid bacterium useful for the amelioration of lactose intolerance. More specifically, disclosed are: a method for screening a lactic acid bacterium capable of ameliorating lac...

権利維持

Semiconductor device

Disclosed is a transistor whose threshold can be adjusted by controlling the impurity concentration of a silicon substrate supporting an SOI layer, while controlling the thickness of a buried insul...

権利維持

Nonvolatile semiconductor m...

It is possible to provide a nonvolatile semiconductor memory formed by memory cells using the side wall of an island-shaped semiconductor layer capable of evading lowering of write speed and read s...

権利維持

Semiconductor device

Provided is a semiconductor device, in which the degree of flatness of 0.3 nm or less in terms of a peak-to-valley (P-V) value is realized by rinsing a silicon surface with hydrogen-added ultrapure...

権利維持

Transistor

Provided is an accumulation type transistor having an impurity concentration of a semiconductor layer in a channel region at a value higher than 2OE0<17>cm<-3> to have a large gatevoltage swing.

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