Chemical mechanical polishing

Patent Granted Scratches and dishing are prevented from being generated at the time of polishing copper deposited on an interlayer insulating film composed of an organic low-k film in damascene process. In the CMP apparatus, the rotating center axis of a rotating head (10) having a polishing pad (12) attached thereon and the rotating center axis of a rotating table (14) having a semiconductor wafer (100) mounted thereon with the semiconductor wafer facing up are aligned on the same perpendicular line (N).