Depositing silicon oxide onto substrate

Patent Granted Silicon dioxide (usually called simply "oxide" in the semiconductor industry) may be deposited by several different processes. Common source gases include silane and oxygen, dichlorosilane (SiCl2H2) and nitrous oxide[10] (N2O), or tetraethylorthosilicate (TEOS; Si(OC2H5)4). The reactions are as follows[citation needed]: SiH4 + O2 → SiO2 + 2 H2 SiCl2H2 + 2 N2O → SiO2 + 2 N2 + 2 HCl Si(OC2H5)4 → SiO2 + byproducts