Depositing silicon oxide onto substrate

特許 権利維持 Silicon dioxide (usually called simply "oxide" in the semiconductor industry) may be deposited by several different processes. Common source gases include silane and oxygen, dichlorosilane (SiCl2H2) and nitrous oxide[10] (N2O), or tetraethylorthosilicate (TEOS; Si(OC2H5)4). The reactions are as follows[citation needed]: SiH4 + O2 → SiO2 + 2 H2 SiCl2H2 + 2 N2O → SiO2 + 2 N2 + 2 HCl Si(OC2H5)4 → SiO2 + byproducts