Electricity, Lighting
Category
Japan, United states of America, Europe, Rest of World
Geographic Coverage
Not Available
Video URL
Not Available
Sale price (USD)
Not Available
Non-exclusive license price (USD)
Not Available
Exclusive license price (USD)
Not Available
Non-exclusive license royalty rate %
Availability
Plus or Premium required
IP number
Plus or Premium required
Patent family
Plus or Premium required
Number of members in the patent family
Plus or Premium required
Applicant(s)
Plus or Premium required
Inventor(s)
Plus or Premium required
Assignee(s) / Patent owner(s)
Plus or Premium required
Priority date
Plus or Premium required
Application date
Plus or Premium required
Grant Date
Plus or Premium required
IPC / #
Plus or Premium required
CPC
Plus or Premium required
USPC
Plus or Premium required
Link to patent publication
To see the additional information details please login and subscribe to a Premium account.

Gallium nitride

Patent Pending Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic,[4][5] high-power and high-frequency devices.

BROKER APPLY submit an inquiry
photo To see the additional information details please login and subscribe to a Plus or Premium account.

Related IPs