To provide a shower plate which is capable of dispensing with a cover plate. The shower plate 105 is arranged in the processing chamber 102 of a plasma processing device and emits a plasma exciting...
To provide a flexible rigid printed wiring board capable of improving a bending endurance of the flexible part with a flexibility of the flexible part secured and securing the conductivity of the r...
Disclosed is a lactic acid bacterium useful for the amelioration of lactose intolerance. More specifically, disclosed are: a method for screening a lactic acid bacterium capable of ameliorating lac...
A magnetically recording medium which capable of recording and replaying information at a high density by balancing the minifying of particle size with perpendicular orientation of perpendicular ma...
To provide a power IC device having low ON resistance of the power MOS transistor and assuring higher processing rate of the surface layer channel MOS transistor and also provide the method for man...
To provide a manufacturing device of a light-emitting element in which the light-emitting element having a plurality of layers including organic layers can be manufactured with superior productivit...
To provide a manufacturing device of a light-emitting element of which the structure is simple and occupying area is small. The manufacturing device of the light-emitting element has a plurality of...
To accurately measure a standing wave as an index to identify the waveguide length [lambda]g in a waveguide. By detecting temperature distribution of a conductive member constituting at least a par...
To provide microwave plasma treatment equipment in which flow velocity of gas is suppressed. The microwave plasma treatment equipment 100 has a dielectric window constituted of a plurality of diele...
Disclosed is a shower plate which enables efficient plasma excitation, while completely preventing backflow of plasma. Specifically disclosed is a shower plate (105) which is arranged in a process ...
An accumulation-type transistor in which a semiconductor layer in a channel region has an impurity concentration higher than 2 x 10<sp>17</sp> cm-3 so as to assure large gate voltage swing.
A transistor is obtained in which a threshold value is adjusted by adjusting an impurity concentration of a silicon substrate supporting a SOI layer and by controlling the thickness of a buried ins...
In a light-shielded state and in a nitrogen atmosphere, a silicon surface is cleaned by the use of hydrogen-added ultra pure water. As a consequence, a flatness of 0.3nm or less as a peak-to-valley...
To provide a shower plate which can prevent generation of backflow of plasma or firing of plasma excitation gas at a longitudinal hole more perfectly, and can ensure efficient plasma excitation. In...
This non-contact electric power supply device 6 is used to charge, for example, a battery of an electric vehicle, and electric power is supplied from a primary side, i.e., a primary coil 7 on an el...
For the purpose of efficiently producing a high-purity rhodium-tellurium intermetallic compound particle, a solution containing a rhodium salt, a tellurium salt and a complexing agent is brought in...
The present invention relates to a method for manufacturing a nitride semiconductor, comprising the steps of controlling the temperature and pressure of an autoclave having a crystal seed having a ...
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Between a first wiring layer and a second wiring layer included in a multilayer wiring structure, a gas or an insulating material having an average dielectric constant not greater than 2.5 is inter...
In a semiconductor device according to this invention, an insulator layer on a substrate is provided with a groove. In the groove, a gate electrode is formed with its surface substantially flush wi...
