To provide a microwave transmission line which uses a coaxial tube. A plasma processing apparatus (10) splits a microwave, which is transmitted to a coaxial tube (600) from a microwave source (900)...
In a low-electron-temperature high-density plasma excited by microwave, an organic metal material gas is supplied so that a compound thin film is formed on a substrate as an object to be subjected ...
On a surface of a material to be processed, a Mn containing thin film or a CuMn containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn containing material gas (or Mn cont...
To suppress propagation of a conductor surface wave. A plasma processing apparatus (10) is provided with a processing container (100) formed of metal; a microwave source (900) for outputting a micr...
In a rotary magnet sputtering apparatus, when a target surface is gradually changed as the target is being depleted with time, which brings about a change in a deposition rate with time. In order t...
An object of this invention is to provide a magnetron sputtering apparatus improved in deposition rate by increasing a plasma density on a target at every moment. The magnetron sputtering apparatus...
A perpendicular magnetic recording medium having at least one backing layer, at least one seed layer, at least one primary layer and at least one perpendicular magnetic recording layer, which are f...
A base member is made of a material, such as SiC, which is more excellent in mechanical characteristics than silicon forming a semiconductor layer. The base member and the semiconductor layer are a...
An independent pixel output line (14) is arranged for each of pixels (10) arranged two-dimensionally in a pixel region (2a) and a plurality of storage units are connected to the respective pixel ou...
A perpendicular magnetic recording medium having at least a soft magnetic primary layer, a perpendicular magnetic recording layer and a protective layer, which are formed on a non-magnetic substrat...
Almost in the center of the light-receiving surface of an embedded photodiode (31), a floating diffusion (331) is formed and the gate electrode of a transfer transistor (32) is so disposed as to su...
Pixels (10) including photo diodes are arranged in a two-dimensional array in a pixel region (2a). Storage units holding signals generated by the respective pixels for the number of continuous imag...
An independent pixel output line (14) is arranged for each of pixels arrange in a two-dimensional array in a pixel region so that pixel signals can be successively written into storage units (22) v...
To provide an array of planar light source elements, which is effective to emit a uniform intensity of light in a plane without incurring a lamp image even though the thickness between a target sur...
A semiconductor device manufacturing method includes a step of forming a semiconductor element on a semiconductor substrate, and a step of forming a film on the semiconductor element by a CVD proce...
An interlayer insulating film is formed by using an insulation coating film which is made of one kind or two or more kinds of oxides having a dielectric constant k of 2.5 or less and which is repre...
A bonding apparatus (10) is provided with a chamber (12) whose inside is kept under inert gas atmosphere; a first plasma torch (20) which is attached to the chamber (12) for performing surface trea...
To provide a plasma processing apparatus which can reduce the quantity of dielectric material to be used as much as possible. A plasma processing apparatus is provided with a metal processing conta...
It is an object of this invention to improve a conversion efficiency of a photoelectric transducer structure by reducing a contact resistance. In the photoelectric transducer structure of a pin str...
A pixel output line (14) is set for each pixel (10) arranged two-dimensionally in pixel regions (2a, 2b), and a storage unit (20) is connected to the pixel output lines (14) extended to storage reg...
