Provided is a surface-treating apparatus making use of a neutral particle beam, by which a high-quality surface treatment is fundamentally conducted, and a high surface treatment rate is achieved. ...
This invention provides a shower plate comprising gas release hole members (ceramic member or porous gas flow body) bonded by sintering integrally without any space and disposed, for plasma back fl...
To provide a technique capable of cleaning deposits inside a processing chamber by simple constitution without the need of a remote chamber or an exclusive microwave source or the like. The plasma ...
A wiring structure of a semiconductor device or the like includes an interlayer insulating film and a conductor. The interlayer insulating film has a fluorocarbon film formed on an underlying layer...
A film coating apparatus includes a coating chamber for introducing a substrate into the inside thereof to coat the substrate with a film, a coating liquid container for holding a coating liquid, a...
A treatment container of a coating and developing treatment apparatus of the present invention includes an ultraviolet irradiation unit for applying ultraviolet rays with a wavelength of 120 nm to ...
When positively-charged ions are implanted, in order to suppress emission of secondary electrons from a substrate to be processed to charge up the substrate, a conductor member is disposed at a pos...
This invention provides a semiconductor device in which a surrounding gate transistor (SGT) is used and which has a high degree of integration and at least two stages or more of CMOS inverter conne...
As a gate insulating film disposed between a gate electrode and a semiconductor layer, a transparent insulator film A131 obtained from a coating agent is formed. The coating agent is one kind of mi...
The present invention includes a load chamber into which a substrate is introduced and an RIE apparatus for performing reactive ion etching treatment on the substrate. The inner surface of the proc...
A first and a second static-pressure gas bearings supporting a rod at two locations in the axial direction in the non-contact manner are provided, in which the first static-pressure gas bearing is ...
A working rod with a tip end extending into a vacuum process chamber and moving in the axial direction, two static-pressure gas bearings supporting the rod in the non-contact manner, and an interna...
A plasma processing system 10 includes a processing chamber 100, a microwave source 900 that outputs a microwave, an inner conductor of a coaxial waveguide 315a that transfers the microwave, a thro...
To provide a microwave transmission line which uses a coaxial tube. A plasma processing apparatus (10) splits a microwave, which is transmitted to a coaxial tube (600) from a microwave source (900)...
In a low-electron-temperature high-density plasma excited by microwave, an organic metal material gas is supplied so that a compound thin film is formed on a substrate as an object to be subjected ...
On a surface of a material to be processed, a Mn containing thin film or a CuMn containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn containing material gas (or Mn cont...
To suppress propagation of a conductor surface wave. A plasma processing apparatus (10) is provided with a processing container (100) formed of metal; a microwave source (900) for outputting a micr...
In a rotary magnet sputtering apparatus, when a target surface is gradually changed as the target is being depleted with time, which brings about a change in a deposition rate with time. In order t...
An object of this invention is to provide a magnetron sputtering apparatus improved in deposition rate by increasing a plasma density on a target at every moment. The magnetron sputtering apparatus...
A perpendicular magnetic recording medium having at least one backing layer, at least one seed layer, at least one primary layer and at least one perpendicular magnetic recording layer, which are f...
