PROBLEM TO BE SOLVED: To provide a p-type MgZnO-based thin film which functions as a (p) type, and a semiconductor light-emitting element comprising the p-type MgZnO-based thin film. ; SOLUTION: A ...
PROBLEM TO BE SOLVED: To provide a normally-off nitride semiconductor element and a manufacturing method of the same. ; SOLUTION: The CAVET includes an n<SP>+</SP>-type GaN substrate 1, an insulati...
In a film forming method, a subject to be processed is transferred into a processing chamber which can be vacuumized. At least a transition metal containing material gas including a transition meta...
A manufacturing method of solid particulate is provided to be usable as a solvent if an emulsion is formed because crystal growth is made in the emulsion.
By softening PVDF, which is a fluorinated resin, by adding a perfluoro monomer thereto, the oxygen permeation level can be remarkably lowered and a flexible fluorinated resin tube can be obtained. ...
A method in which even when quartz glass or silicon dioxide is deposited as a molten dross by laser irradiation, boring can be conducted. Work object (100) at its laser irradiation position (12) is...
The invention aims at overcoming simultaneously the disadvantages that hi gh temperature is required for the progress of solid-phase carbonization and that the use of an expensive raw material is i...
Disclosed are: a PET probe compound having an alkoxy group substituted by a fluorine and a hydroxy group, which is useful for the early diagnosis of a conformational disease; a pharmaceutical compo...
An interlayer insulating film is obtained by laminating a hydrocarbon layer containing Si atoms and a fluorocarbon layer containing N atoms. The hydrocarbon layer contains H atoms and C atoms so th...
A gas is jetted from a sonic nozzle towards a rear surface of a wafer. The flow velocity of the gas flowing along the rear surface of the wafer towards an outer periphery thereof is accelerated or ...
In a conventional magnetron sputtering apparatus in which a magnetic field pattern on a surface of a target is moved with time by a group of rotary magnets, the defect rate of substrate is increase...
A soft magnetic alloy obtained by preparing a Fe-based alloy composition molten, followed by rapidly cooling the Fe-based alloy composition to solidify it, wherein the Fe-based alloy composition co...
To provide a composite magnetic material having a sufficiently small magnetic loss at a frequency on the order of several hundreds MHz to several GHz and a method of producing the same. In a compos...
To provide a method for processing plasma capable of preventing occurrence of abnormal discharge on a gas guiding path formed at a shower head having the function of a top plate. The plasma process...
To provide a plasma processing apparatus for which a low frequency electromagnetic wave can be used. A plasma processing apparatus (10) is provided with a processing container (100); a microwave so...
The invention provides a manufacturing method for a support pin, a support pin, a thermal treatment device and a substrate firing furnace. The support pin supports a substrate processed by thermal ...
Provided is an MOS semiconductor memory device having excellent data storage characteristics, high speed data rewriting performance, low power consumption operation performance and high reliability...
Provided is a silver powder coated with low-molecular-weight protective material allowing a greatly reduced sintering temperature comparing to conventional technique, according to processes appropr...
Provided is a substrate structure manufacturing method comprising a first step (S11) of preparing a substrate having at least one fine hole, a second step (S12, S13) of mounting electrodes and imme...
A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a g...
