Between a first wiring layer and a second wiring layer included in a multilayer wiring structure, a gas or an insulating material having an average dielectric constant not greater than 2.5 is inter...
In a semiconductor device according to this invention, an insulator layer on a substrate is provided with a groove. In the groove, a gate electrode is formed with its surface substantially flush wi...
Provided is a surface-treating apparatus making use of a neutral particle beam, by which a high-quality surface treatment is fundamentally conducted, and a high surface treatment rate is achieved. ...
This invention provides a shower plate comprising gas release hole members (ceramic member or porous gas flow body) bonded by sintering integrally without any space and disposed, for plasma back fl...
To provide a technique capable of cleaning deposits inside a processing chamber by simple constitution without the need of a remote chamber or an exclusive microwave source or the like. The plasma ...
A wiring structure of a semiconductor device or the like includes an interlayer insulating film and a conductor. The interlayer insulating film has a fluorocarbon film formed on an underlying layer...
A film coating apparatus includes a coating chamber for introducing a substrate into the inside thereof to coat the substrate with a film, a coating liquid container for holding a coating liquid, a...
A treatment container of a coating and developing treatment apparatus of the present invention includes an ultraviolet irradiation unit for applying ultraviolet rays with a wavelength of 120 nm to ...
When positively-charged ions are implanted, in order to suppress emission of secondary electrons from a substrate to be processed to charge up the substrate, a conductor member is disposed at a pos...
This invention provides a semiconductor device in which a surrounding gate transistor (SGT) is used and which has a high degree of integration and at least two stages or more of CMOS inverter conne...
As a gate insulating film disposed between a gate electrode and a semiconductor layer, a transparent insulator film A131 obtained from a coating agent is formed. The coating agent is one kind of mi...
The present invention includes a load chamber into which a substrate is introduced and an RIE apparatus for performing reactive ion etching treatment on the substrate. The inner surface of the proc...
A first and a second static-pressure gas bearings supporting a rod at two locations in the axial direction in the non-contact manner are provided, in which the first static-pressure gas bearing is ...
A working rod with a tip end extending into a vacuum process chamber and moving in the axial direction, two static-pressure gas bearings supporting the rod in the non-contact manner, and an interna...
A plasma processing system 10 includes a processing chamber 100, a microwave source 900 that outputs a microwave, an inner conductor of a coaxial waveguide 315a that transfers the microwave, a thro...
To provide a microwave transmission line which uses a coaxial tube. A plasma processing apparatus (10) splits a microwave, which is transmitted to a coaxial tube (600) from a microwave source (900)...
In a low-electron-temperature high-density plasma excited by microwave, an organic metal material gas is supplied so that a compound thin film is formed on a substrate as an object to be subjected ...
On a surface of a material to be processed, a Mn containing thin film or a CuMn containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn containing material gas (or Mn cont...
To suppress propagation of a conductor surface wave. A plasma processing apparatus (10) is provided with a processing container (100) formed of metal; a microwave source (900) for outputting a micr...
In a rotary magnet sputtering apparatus, when a target surface is gradually changed as the target is being depleted with time, which brings about a change in a deposition rate with time. In order t...
